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| ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES * 5.5 Amps continuous current * Up to 20 amps peak current * Very low saturation voltages * Exceptional gain linearity down to 10mA SOT223 APPLICATIONS * DC - DC converters * MOSFET gate drivers * Charging circuits * Power switches * Motor control ORDERING INFORMATION DEVICE ZXTP2008GTA ZXTP2008GTC REEL SIZE 7" 13" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1,000 units 4,000 units PINOUT DEVICE MARKING ZXTP 2008 TOP VIEW ISSUE 1 - JUNE 2005 1 ZXTP2008G ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range T j , T stg PD (a) SYMBOL BV CBO BV CEO BV EBO IC I CM PD LIMIT -50 -30 -7 -5.5 -20 3.0 24 1.6 12.8 -55 to 150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R JA R JA VALUE 42 78 UNIT C/W C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - JUNE 2005 2 ZXTP2008G CHARACTERISTICS ISSUE 1 - JUNE 2005 3 ZXTP2008G ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-base breakdown voltage SYMBOL BV CBO MIN. -50 -50 -30 -7.0 TYP. -70 -70 -40 -8.0 <1 -20 -0.5 Collector cut-off current I CER R < 1k Emitter cut-off current Collector-emitter saturation voltage I EBO V CE(SAT) <1 -30 -40 -60 -70 -170 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) h FE 100 100 70 10 Transition frequency fT C OBO t ON t OFF <1 -20 -0.5 -10 -45 -60 -85 -90 -210 MAX. UNIT CONDITIONS V V V V nA A nA A nA mV mV mV mV mV mV mV I C = -100 A I C = -1 A, RB < 1k I C = -10mA * I E = -100 A V CB = -40V V CB = -40V, Tamb = 100C V CB = -40V VCB = -40V, Tamb = 100C V EB = -6V I C = -0.5A, I B = -20mA * I C = -1A, I B = -100mA * I C = -1A, I B = -20mA * I C = -2A, I B = -200mA * I C = -5.5A, I B = -500mA * I C = -5.5A, IB = -500mA * I C = -5.5A, V CE = -1V * I C = -10mA, V CE = -1V * I C = -1A, V CE = -1V * I C = -5A, V CE = -1V * I C = -20A, V CE = -1V * I C = -100mA, V CE = -10V f = 50MHz Output capacitance Switching times 83 43 230 pF ns V CB = -10V, f = 1MHz * I C = -1A, V CC = -10V, I B1 = I B2 = -100mA Collector-emitter breakdown voltage BV CER Collector-emitter breakdown voltage BV CEO Emitter-base breakdown voltage Collector cut-off current BV EBO I CBO -1030 -1130 -900 225 200 145 20 110 300 -1000 NOTES * Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. ISSUE 1 - JUNE 2005 4 ZXTP2008G TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 ZXTP2008G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2005 6 |
Price & Availability of ZXTP2008GTC
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